Hi,

I used to grow materials using UHVCVD on Si wafer. To prepare the wafer, we
usually did RCA cleaning followed by N2 spin dry. And the growth was
successful. Recently, we want to try some growth on Si/Ge pieces, but have
this surface preparation problem. The spin dry machine can only accept 4" or
6" wafer but not pieces. We tried to use N2 gun to blow the pieces after
chemical treatment. But the result was not so good, especially on the
peripheral part of the pieces due to the possible water residue on the edge.
Do you guys have any experience on pieces sample growth and give some
advices? Thank you very much!

Regards,


Harry,