hi all,

I make two ends clamped beams of AlGaAs over GaAs, using dry and wet etch
techniques.

Now i want to form cantilevers out of these beams, by either cleaving or
modification of my lithography process.

I have tried excimer laser ablation technique to cut the clamped beams, i formed
the cantilevers, but the quality of the facets was bad due to melting..

I also tried femtosecond laser cutting, again, quality not great.

I desire a spacing of 1-3 microns between the two facets of the clamped
beams,after they are ablated. Also I need clean cut because, I am goin to couple
light from one beam to the other.

Can someone suggest a technique for going about doing this, i do not have access
to a FIB (focussed ion beam) milling, and e-beam lithography is too time
consuming as my device is in millimeters.

is there some way of introducing a 1-3 micron cut on my lithography pattern
before I do the dry and wet etch, i do not have a mask with this kind of a
feature size?

any suggestions will be helpful

regards
vaibhav mathur
photonics center
university of massachusetts,lowell