I need to etch 5 microns of sacrificial PECVD SiO2 using isotropic plasma etch. Does anyone have any experience with this? I have seen that in literature CF4 is mentioned to be isotropic plasma but not too many details. Any extra info will is welcome. Sincerely yours, Sebastian Sosin Yahoo Messenger: sosin_sebastian Address: Delft University of Technology, Mekelweg 4, Room LB 01.380 2628 CD DELFT, the Netherlands Mobile Phone #: +31(0)651976932 Office Phone #: +31(0)152789421