James, Have you considered that you may be oxidizing away the poly? That would explain the rise in resistivity with further drive-in steps. Paul > Hello all, > > I'm presently having some difficulty with doping my polysilicon. My > substrate structure is as follows (from bottom to top): > > 300 microns thick p-type Silicon > 400 nm low Stress LPCVD SiN > 150 nm undoped polysilicon. > > Now I would like to reduce the sheet resistance of the polysilicon. To > do this I've used Emulsitone's Borosilicafilm spin on dopant called > "Borosilicafilm I" -data sheet available on Emulsitone website. > > I had initial problems to do with removing the Borosilicafilm after the > diffusion (all to do with my lack of oxygen ambient). > > I used a Jandel 4 point probe to try and measure the sheet resistance of > my undoped polysilicon. It was essentially immeasurable implying a sheet > resistivity of greater than 10 mega ohms /square! I was looking to get > the sheet resistance value to between 50-250 ohm persquare. I then would > like to dope the contact regions (I am fabricating polysilicon > resistors) to around 10 ohm per square. > > I used the following protocol to dope my polysilicon: > > 1. Standard clean > 2. Spin Borosilicafilm dopant > 3. Bake 20 minutes 200oC (essentially to remove the solvent from the > dopant film) > 4. Diffused for 15/30 minutes at 1050oC (this is the maximum temperature > of my furnace) in 95%/5% N2/O2 > 5. Borosilicafilm is etched off either using CHF3 dry etch or 49% HF > (90% of my tests I use wet etching rather than dry etching) > 6. Measure sheet resistance. > > After diffusion for 15 minutes the sheet resistance of my polysilicon > reduces to around 200 ohms pr square while diffusion for 30 minutes > results in a sheet resistance of 150 ohms per square. So far so good. > > However when I doped the polysilicon film for a second time (recall I'd > like a sheet resistance of 10 ohms persquare in the contact regions), > following the exact same protocol as above, I found the sheet resistance > INCREASES to around 270 ohms per square after 15 minutes and 350 ohms > per square after 30 minutes. > > My simple question is this: Can anyone shed on light on this phenomenon?