Would an isotropic etch (nitric, acetic, HF) work for your application? It seems that an anisotropic etch is just asking for trouble. Applications Director Solecon Labs 770 Trademark Drive Reno, NV 89521-5926 Work: roger@Solecon.com Work: 775-853-5900 ext 108 -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]On Behalf Of Moshe Sent: Sunday, November 23, 2008 2:08 PM To: General MEMS discussion Subject: [mems-talk] Problem with 4" wafer thining with TMAH solution I try to thin 4" wafer with TMAH 5% and 18% and I get bad surface at the 5% solution and at the 18%. These are the steps in my process : 1.To make those TMAH concentration I purchse TMAH 25% and dilute with water . 2. Before the etching I dip the wafer for 20 sec. in BOE to strip the native oxide and still I get a bad surface. 3. The process temp. is 85 cel. degree 4. The aim is to thin the wafer from 500 micron to 450 micron I'm looking for someone who has done this procees successfully .