Hi,

I would like to perform dry etching of SiO2 (on Si surface) finishing with
H-terminated Si surface. What kind of plasma should be applied at the end of the
process to obtain a reduced silicon surface? Is it possible at all to substitute
an aqueous HF etching by the plasma process?

I will be grateful for any help.
Thanking you in advance,

Best regards,

Dr. Jolanta Kurz
Fachhochschule Nordwestschweiz
Hochschule für Life Sciences
Institut für Chemie und Bioanalytik
Gründenstrasse 40
CH - 4132 Muttenz
T +41 61 467 44 67
F +41 61 467 44 57
jolanta.kurz@fhnw.ch
www.fhnw.ch/lifesciences