SF6+O2 should work. ICP RIE or DRIE systems would be the best. On Wed, Feb 25, 2009 at 2:32 PM, Alexandre BOEwrote: > Dear all, > > We would like to etch silicon (top layer of SOI wafers) using dry (or wet) > etch. We would like to get a good selectivity of this etching solution with > LPCVD silicon nitride (and PECVD silicon dioxyde, but less important). > > Up to now, we are using SF6 plasma. Si3N4 beams are defined on the top Si > layer. When the top silicon layer is etched, the SiO2 is an etch stop layer > and then the RIE etches underneath the silicon under the beams and then > releases them. > > Any idea or suggestion for an etching solution (we prefer dry etch to avoid > a CPD step). > > Thanks, > > Alexandre * Zou Jie (Jay) * Department of Physics * University of Florida * Tel: +1-352-846-8018 * Email: zoujiepku@gmail.com * Homepage: http://plaza.ufl.edu/zoujie/