Hi,

I tried to bond SiO2 SiO2 at 300o celcius with 1 bar pressure. It sticks for two
days. After that, the bonding seems weaken and that two wafer start to separate.

I have CrAu film below the SiO2 in both wafer. That is the reason why i need to
lower the temperature.

Could anyone suggest the suitable method to increase the bonding strengh.

Thanks

hafizah