All -

I am using an Oxford ICP-RIE to etch films of 3000 Ang Al/50 Ang Nb on
Si.  The recipe recommended by Oxford uses Cl2 to break through the Al
oxide (conveniently also etches Nb), followed by HBr to etch Al.
Unfortunately I find that the Si is also etched a significant amount
(several hundreds of Angstroms) by this process.

Appreciate any recommendations how to reduce the amount of Si etching.

Thanks!

--
Dr. Aaron Datesman
Post-Doctoral Research Associate
Materials Science Division
Argonne National Laboratory
9700 S. Cass Avenue
Bldg. 223, B-217
Argonne, IL 60439

630-252-9154 (office)
630-252-7777 (fax)
773-899-1095 (cell)
datesman@anl.gov