durusmail: mems-talk: CMOS process simulation in Ansys
CMOS process simulation in Ansys
2009-11-30
CMOS process simulation in Ansys
Bao Quyen Ngo
2009-11-30
Dear All

My name is Ngo Bao Quye.

I am student at National University of Tainan, Taiwan.

I am doing a masters thesis about using Ansys to simulate CMOS process, similar
to the process in the paper :"A finite element analysis technique for predicting
as-sprayed residual stresses generated by the plasma spray coating process".
This is a link to the paper from sciencedirect:

 http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V36-4G65TXC-1&_user=
1498491&_coverDate=07/31/2005&_alid=1115403675&_rdoc=1&_fmt=high&_orig=search&_c
di=5722&_sort=r&_docanchor=&view=c&_ct=62&_acct=C000053207&_version=1&_urlVersio
n=0&_userid=1498491&md5=8d8e241c52a240e4a957efd8985e6d51

I'm having difficulty determining the "Initial condition" when i update the
model (2 layer ->3 layer...) and i can't define it in Ansys.

In this paper, i see: "After the analysis for each period, the nodal
temperatures for the entire model including the most recently deposited layer
(N-1) are saved to file. The duration of the period is solved as a thermal
transient analysis having multiple time steps, the number of which is determined
according to the default tolerance setting. The geometry is also updated and
nodal temperatures from the previous-layer analysis will be used as initial
conditions for the subsequent layer analysis (period N)"

Can anyone comment about "How to save result previous step and use it as initial
conditions for next step in Ansys" similar in this paper?

Also, can you tell me how to simulate "Thermal Shock" in Ansys, it's very
important when we use
Ansys simulate the cooling process.

Thank you very much.

Best Regard

Bao Quyen Ngo

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