Hello All:

Would someone please give me a CD sizing calculation for positive vs.
negative thick resist (assumed their resist/etch profile are different)?  I
need these info to figure out why I have seen much large positive post
Litho/Etch bias on my 10um feature (aspect ratio of 4:1) (i.e. mask CD is
10um but on wafer CD got to 13um or so).  Also, doesn't focus a matter for
exposing thick resist?

Thank a lot!

Paul