I have used this method in IC production. The purpose of the nitride was to prevent silicon oxidation underneath. A layer (100nm) of high quality LPCVD nitride was deposited. (The etch rate in conc HF was VERY low.) The surface of the oxide was then oxidized. The thin layer of oxide was masked and etched in BOE. After stripping the resist, the nitride was etched in phosphoric. We used boiling concentrated phosphoric in a quartz beaker with a water-cooled reflux condenser as a tightly fitting lid. We monitored the temperature and added water as needed to maintain the temperature (and boiling point) at 150 deg C (I may be remembering the temp wrong.) If you allow the boiling point to get too high, the phosphoric will etch the oxide at a much faster rate. You need a little bit of thermally oxide underneath the nitride. Once the phosphoric etches through the oxide underneath, it will attack the silicon and make it look real ugly. Roger Brennan Applications Director Solecon Labs 770 Trademark Drive Reno, NV 89521-5926 -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]On Behalf Of Andrea Mazzolari Sent: Monday, December 14, 2009 9:23 AM To: General MEMS discussion Subject: [mems-talk] silicon nitride HF resistant Hi all, i have some silicon wafers coated with 100nm LPCVD silicon nitide. I need to patter the silicon nitride. I realized photolitograhy and immersed the wafer in BHF. Usually removal of silicon nitride takes about 4 hours, but this time after 7 hours silicon nitride was still present. I removed photoresist and immersed the wafer in concentrated HF. I can see that the color of silicon nitride slowly changes with time, so probably there is some etching, but after 1 hour silicon nitride was still present!! After that i immersed in the same HF a second wafers coated with 100nm LPCVD silicon nitide (this second wafer is coming from another source). Silicon nitride was removed in some minutes. Where could be the problem with the silicon nitride on the first wafer ?? Best regards, Andrea