Goodmorning Xiaoyong,

If your features are covered with SiN, why do you still need Protek for KOH
protection?
In here we  have very good results with Parylene as KOH protection. Removal of
this is done in a O2 plasma
for about 45 min.

best regards,

Peter Kuijpers
MiPlaza Technology Laboratories
Philips Research Europe
High Tech Campus 04
Postbox HTC-4-1
5656 AE Eindhoven
The Netherlands
Tel.: +31 402743667
         +31 612507027
Email: p.e.m.kuijpers@philips.com


-----Original Message-----
From: mems-talk-bounces+p.e.m.kuijpers=philips.com@memsnet.org [mailto:mems-
talk-bounces+p.e.m.kuijpers=philips.com@memsnet.org] On Behalf Of Xiaoyong Liu
Sent: Friday 2 April 2010 20:22
To: mems-talk@memsnet.org
Subject: [mems-talk] ProteK B3 coating layer removal

Hi,
    I am using a so-called Protek B3 layer (spin coated) from Brewer Sciences as
a protecting layer for my wafer frontside during KOH wet etching. It serves its
purpose pretty well, but it is very hard to remove. I tried the remover (Protek
remover 100) they suggested as well as acetone overnight.

There is still an apparent layer there after overnight soaking in above
solutions. I also tried to use O2 plasma (as well as CF4/O2 combination), but
with no apparent effect.  I am wondering if someone has any experience with it,
and would share their insight with me. By the way, my sample is on Si substrate
coated with a thin layer of SiN. The features are just metal.

Thanks

Xiaoyong

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