Hello,

I am having issues removing my e-beam resist FOX16 aka HSQ. I spun 700
nm FOX16 onto an SOI wafer and used a switched SF6, C4F8/O2 process to
etch a depth of 5 microns in silicon. However after the etch I'm unable
to remove the FOX16 either by using 5:1 BHF, organic solvents or O2 plasma.

Does anyone have an ideas, hints or tips? I'm guessing the C4F8 has
reacted in some way to form a nasty carbon based compound that is near
impossible to remove.

Thanks,

James

--
Dr. James Paul Grant
Postdoctoral Research Associate
Microsystems Technology Group
74 Oakfield Avenue Room 5
University of Glasgow
Glasgow
Scotland
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Telephone: +44(0)141 330 6690