Hi everyone,

I etch a trench on the structure layer of SOI (sturcture layer thickness
40μm，trench depth 40μm，gap 2.5μm),  then plan to refill the trench with low
stress CVD SiO2 which is for electrical isolation of bulk silicon.

Because this structure will hold in suspension eventually, just like a
clamped- free beam which two parts silicon connect by the low stress CVD
SiO2, I want to make sure:

1 How dense is the low stress CVD SiO2?

2 Could i use the low stress CVD SiO2 for a  bulk material to hold the whole
structure?

Does the low stress CVD SiO2 have the enough strength to hold the silicon
mass?  Giving the yield strength information of low stress CVD SiO2 would
be better.

Any suggestions will be appreciated.

Thanks

Yan Xin
-Pen-Tung Sah MEMS Research Center,
-Xiamen University, CHINA
XMU HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html