Dear colleagues,

How are you doing?

I have a problem with the SnO2 etching. It would be greatly appreciated if you
give me some advice.

I have made both nano-scaled and micron-scaled SnO2 pattern by sol-gel method.
However, I need to remove this layer.

I have tried diluted HCl solution for wet-etching, but it seems not working at
all.
I also tried dry-etching with Cl-based plasma etching. I seems to work well,
however, it also damages the substrate.

I want to remove this layer with minimum damage of substrate.

Could anybody help me with this?

Substrate I used was ITO (200nm) on Sapphire (c-plane).

Thanks in advance.

V/r

Hyoungwon Park