We use N2 as a carrier gas in PECVD TEOS oxide deposition with no N
incorporation. With NH3 in the process the index of refraction remains in
the SiO2 range. As for DCS I believe Cl2/HCl in the aluminum chamber could
be problematic.

Best regards,
Glenn

-----Original Message-----
From: Ruiz, Marcos Daniel (SENCOE) [mailto:Dan.Ruiz@Honeywell.com]
Sent: Friday, September 17, 2010 1:35 PM
To: General MEMS discussion
Subject: Re: [mems-talk] PECVD SiN wiithout Silane?


SiH2Cl2 is routinely used in LPCVD; can it also work in PECVD?

Also, have you considered a liquid source - like TEOS?  I've worked at a
company that used TEOS to deposit PECVD oxide.

Dan