Hi, I am working on a project where I need to make aligned contacts to randomly-distributed nanostructures a few microns across. My leads and alignment need to be to within about 0.25 microns, which is too small for the contact aligner I have access too. I can do aligned ebeam lithography, but it seems like overkill when I don't need to push the resolution and each alignment is only good for a single set of contacts. I can put down Pt in our dual-beam FIB ( http://www.fei.com/uploadedFiles/Documents/Content/2006_08_Strat400STEM_Family_S emi_pb.pdf), but eventually I need to make contacts out of other materials. I am interested in exposing ebeam resist with the electron-beam in our FIB. We don't have a dedicated add-on like one of the Raith systems ( http://www.raith.com/) but can generate patterns with the included software. My plan is to use a resist that requires a high dose (maybe PMMA) and image the area that I want to expose briefly at ~2 kV, ramp the beam up to 30 kV and expose the region. Has anyone done anything like this before or have any thoughts? Thanks, Alex