Hi all:

I want to etch a 2um depth vertical trench with an aspct ratio from 2:1 to 1:50
using  CP cryogenic reactive ion etching process. I found that it has a
microload effect by 10% at the etch rate 3um/min. i want to decrease the
microload effect as much as possile (below 2%).

Can anybody give suggestions?

Does it work if i low the etch to 0.2um/min?

Andrew