Hi,

Usually thickness of thermal oxide grown on a Si wafer is measured by Nanospec
or Ellispometer.

Now I'm interested in how to measure thickness of thermal oxide grown on a 4H
SiC wafer?
It should be non-destructive and useful for production.

In my simple guessing the principle is the same, using refractive index of each
layer. Then can we use Nanospec for this case too?

If not what should be the method and who are suppliers for a measuring tool for
this application?

Thanks a lot!


Regards,
SM