What is the Al composition? Has a huge impact on etch rate. -----Original Message----- From: Yiming LaiSender: mems-talk-bounces+goorsky=seas.ucla.edu@memsnet.org Date: Thu, 3 Feb 2011 10:36:54 To: General MEMS discussion Reply-To: General MEMS discussion Subject: [mems-talk] undercut the sacrificial AlGaAs layer Hi All, We wanted to selectively wet etch the sacrificial AlGaAs layer over GaAs in order to get a free standing structure. We've tried BOE (6:1) for about 2mins but the undercut was not obvious. I was wondering if anyone knows roughly the etching rate of AlGaAs in BOE? And also, what would you suggest, to use the BOE before or after removing the photo resist? Thanks for your help. lmign