Several years ago I did some Si etching in a conventional CCP RIE system
using SF6, O2 and CHF3.  The etch rates were ~0.2-0.5um/min with depth
up to ~30um.

For more info look at papers on The Black Silicon Method by Henri
Jansen.

Roger Shile

-----Original Message-----
From: mems-talk-bounces+rshile=nanoink.net@memsnet.org
[mailto:mems-talk-bounces+rshile=nanoink.net@memsnet.org] On Behalf Of
Jonathan Abbott
Sent: Tuesday, February 22, 2011 1:57 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] DRIE with alternate chemistry

Has anyone tried deep dry etching of silicon with something other that
SF6 and seen good results? What chemistry did you use?

Jonathan Abbott
jdabbott@byu.net