I think your photoresist too thick, dilute the resist. If you can get the resist thickness about 500nm, I don't think there is any problem. Best regards, Jin Yu -----Original Message----- From: Xiaohui Lin [mailto:xiaohui.lin@mail.utexas.edu] Sent: 08 September 2011 17:17 To: General MEMS discussion Subject: [mems-talk] Recipe for NR9 Hi guys I am having a difficult time dealing with NR9-1000P lithography on glass substrate (1mm thick) coated with Cr/Au (50nm). It is a clear field mask, so only the pattern region (5um lines) are not exposed and developed away spin coat thickness is 1um at 3000rpm I found that, when exposing using MA6 Ch1 (7.5mJ) for 20s, line will be almost closed out. But if reduce the time, the bottom may not get enough expose. Could anyone suggest the way to optimize the process?