Dear All,

i need to have ohmic contact (good electrical contact) between:
silicon/sio2 (siO2 thickness 300nm) and Au.   in short i need to have gold
electrodes of Gold on si/sio2 substrate.

i used 5nm Ni as adhesion promotion layer below 100nm Au but it is not
helping. i cannot use Ti or Cr for some reasons. Also, i cannot use any
other metal except Gold.

all evaporation are done using e-beam evaporator or normal thermal
evaporator. patterns are in few 10s of microns to 200microns parallel
lines. i used photolithographic (lift-off) process and also shadowmasking
process both. but in both process i am not able to have good ohmic contact
of Au deposited on SiO2.   i also did O2 plasma cleaning before metal
deposition, doesn't help.

do you know whether i need any annealing or RTA (duration, temp) after
metal depositions ? or do i need to do any surface treatment before
metalization. the only adhesion promotion layers which i can use is Ge or
Ni.

i did and am doing a lot of literature search on Si-SiO2/Ni/Au metalization
but i am not able to get proper paper as we have very few subscribed
journals. everybody says that use Cr or Ti or NiAu alloy as adhesion
promotion layer but not more details are given.

thanks a lot in advance for ur help ...guidance.

regards
ysm

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