Any suggestions on how to improve photo resist (SPR-955) adhesion to LPCVD nitride surface ? Si < 100> with 300 nm dry thermal oxide, 200 nm LPCVD nitride (stress < 250 MPa). We have tried HMDS vapor prime, O2 plasma + HMDS vapor prime and H2O2 soaking + HMDS vapor prime. The spin coated resist appears to shrink from the edge of the 150 mm wafer. Shrinkage is most and visible for the initial few seconds after spin coating. Without HMDS vapor prime treatment, photo resist appears normal after spin coating. However during the develop cycle, photo resist layer appears to be lifting off the substrate surface. Resist thickness is around 1.8 - 1.9 microns Thanks Piyush _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk