Hello Justin, I think you can use most of the broadband photo resists like AZ 15xx, AZ 33xx, AZ MIR 701, Shiply S18xx, JSR .... Some materials will be easier (faster, small sample) to get then other. High resolution is relative - what L/S resolution do you need? Limiting factor can be photo resist contrast but very often exposure system. Some time ago I made a list of commercially available UV photo resists http://www.smartfabgroup.com/photoresists.php have a look. With best regards, Daniel Daniel Figura smartfabgroupT Company process consulting . data processing . fab software Phone: +421 944 45 26 86 E-mail: daniel.figura@smartfabgroup.com, Web: www.smartfabgroup.com Disclaimer notice: The information contained in this message and any attachments is intended only for the personal and confidential use of the designated recipient(s) named above. If you are not the intended recipient of this message you are hereby notified that any review, disseminitation, distribution or copying of this message is strictly prohibited. If you have received this message by error, please notify the sender immediately. -----Original Message----- From: mems-talk-bounces+daniel.figura=smartfabgroup.com@memsnet.org [mailto:mems-talk-bounces+daniel.figura=smartfabgroup.com@memsnet.org] On Behalf Of Justin Hannigan Sent: Tuesday, January 15, 2013 19:02 To: mems-talk@memsnet.org Subject: [mems-talk] High contrast photoresist for interference lithography Hi, I am looking for a high-contrast, high-resolution photoresist to use for interference lithography. Our source is a HeCd laser operating at the 442 nm line. Ultimately, we would like to use the resist as an etch mask, so resistance to fluorine-based chemistry would be beneficial but isn't strictly necessary. I have been working with ma-p 1205 but I have difficulty getting steep sidewalls. I have gotten some good prints using a diluted SPR 220 in the past, but I have had difficulty getting consistent dilutions so I would prefer a commercial pre-mixed product. As I understand it, the high-resolution requirement requires a low viscosity resist that will produce a thin layer when spin coated. (Since we are doing an interference lithography we don't have depth of focus issues, but there's still a limit on the aspect ratio for the lines that limits the resist thickness to less than a micron.) To summarize, I'm looking for a photoresist that has the following properties: 1) Sensitive at 442 nm (g-line resists seem fine) 2) Low viscosity; film thickness less than 1 micron 3) High contrast (large change in development rate when exposed) Can anyone recommend a suitable product for this? Justin -- Justin M. Hannigan, Ph.D. Process Development Engineer LightSmyth Technologies,Inc. 875 Wilson St, Unit C Eugene, OR 97402 Tel: 541-431-0026 www.lightsmyth.com !DSPAM:50f5999e205381938014717! _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk