Dear colleagues,

I have a query regarding inductively coupled plasma etching, and I would be
grateful id anyone
who had had experience of this could advise.

At present we run a standard parallel plate reactive ion etcher with a 300W
13.56 MHz power
supply. Gas is supplied to the top plate of the machine which has been drilled
out to form a
showerhead. Gas connection is via 1/4 inch Swagelok.

We wish to configure the machine as many people do, by keeping the existing
power supply to provide the directional etching and adding a 2 MHz ICP source
'upstream' to
generate a dense plasma. Is this just a simple matter of bolting the ICP source
in to the existing
gas plumbing line? How crucial is the distance between the ICP and the chamber?
Any problems
with compatibility between the two power supplies? Any other things I haven't
thought of?

Many thanks for your time,

Best regards,

David Wood,
Reader,
School of Engineering.