Dear distinguished members of mems-talk,
I am trying to microfabricate micro grooves which are 200um x200um lines
and spaces in term of lithography mask.
I am using STS ICP615 - RIE machine, and a Bosch process with SF6 and O2
for Si etch, and C4F8 for surface polymerization. I tried many recipes,
and finally found a suitable one. Recently, I realized that the determined
recipe is no longer working. From tool log files I found out that, for
some reason the reflected platen power is larger compared to previous
recipe runs. The platen power that is used in the processes, was 13W in
13.56MHz platen. In earlier processes, the reflected power was almost 0 W.
However, right now, reflected platen power is measured as 7-8 W. I tried
to clean the chamber with O2 for 30min hoping that cleaning the chamber
may help with reducing the reflected platen power. I applied the same
recipe and found that the resultant reflected power is still around 7-8 W.
Soon, I will try longer O2 cleaning time. But I am not sure if that will
solve my problem.
If you faced this problem before and know what would solve the problem, or
if you have an idea on how to solve it, could you please share your
knowledge as soon as possible?
Thanks in advance,

Regards
Serdar Taze,
Student, M.Sc
Bilkent University Mechanical Engineering Program
Bilkent Üniversitesi, 06800 Bilkent, Ankara, Turkey
E-mail: serdar.taze@bilkent.edu.tr, s-taze@hotmail.com


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