Xiaochuan, you can try to do a multi-stage oxidation. you will still have a small step height that may cause problems with spinning resist but it will be reduced. there is also a type of photoresist that is sputterable which is a better solution, but I do not have specific info on this. for the oxidation you can do... 1. oxidation 2. pattern structure A 3. oxidation 4. pattern structure B 5. oxidation 6. pattern structure C this will leave no oxide on structure C, 1 layer on structure B, 2 layers on structure A, and 3 layers everywhere else. it requires careful etching of the oxide to stop at the right time and I would keep each layer about 0.1um thick at the most. at lower temps, koh is more selective between oxide and silicon. I have done room temp koh etches 150um deep while consuming about 0.1um of oxide. you may try doing the two shallow structures this way and getting the through holes with deep rie. Chris Foreman -----Original Message----- From: Xiaochuan Zhou [mailto:xczhou@xeotron.com] Sent: Saturday, August 14, 1999 12:43 AM To: MEMS@ISI.EDU Subject: Help on processes Dear colleagues: I would like to get suggestions on fabrication processes. I am designing a process for fabricating a device containing three levels of etched features on a silicon wafer. The features include basins of about 10 micron deep, trenches of about 50 micron wide and 50 micron deep, and narrow through-holes (etched all-the-way through the silicon wafers of 300 to 450 micron thick). I am considering the use of Si(110) substrates and KOH wet etching for achieving the arrow through-holes. It seems that I have to go through at least three etching steps in order to achieve three levels of depth. My difficulty is at the photoresist coating between the steps. Any one of my device features would cause sufficient corrugations on the substrate surface and make uniform photoresist coating impossible. I would like to hear any suggestions on the overall process design, suitable etching processes (wet or dry), and any tricks and/or materials that may make the fabrication easier. Thank you very much.