Hello!

Some questions concerning the fabrication of SU-8 resist layers and the
developing procedure occur during my thesis work with is photo resist. I try to
fabricate an inter digital capacitor structure up to 200µm high with fingers of
20µm with a distance of 20µm. After ca. 5min of developing the developer creeps
 under the lager structures of photo resist, which build the connection to the
IDC. On the other hand, the inter digital capacitor is not fully developed. but
after the next 10min the IDC is lifted and washed away.
In my opinion is difficulty has something to do with exposure dose or adhesion
on my aluminium oxide substrate.
Does anyone have any idea or experience  how to deal with this problem?

Thanks a lot

Frank:-)