I am currently using a thin titanium layer (3 nm by e-gun evaporation) to form a masking layer (pattern generated by lift-off) suitable to RIE etch silicon on regions not covered by the titanium pattern. Titanium is then removed in dilute HF. Titanium is never exposed to a 'high temperature' because: - Ti evaporation is on a 'cold' Si substrate - RIE etching is performed at 15 deg C - Ti removal by dilute HF is at room Temp. TiN and TiSix are not likely to form due to the low Temperature ?? My question is: Is there any possible diffusion of Ti into Si or any contamination that would alter the electrical properties of Si after Ti removal ? I know for instance that Au or Cu are not appreciated for this reason ! Thanks _____________________________________________________ __ ____ __ __ __ __ / /_/ / / / / / _ / /_ /_/ / / / /_ / / / / / / __/ /_ / / Emmanuel Dubois Institut d'Electronique et de Microelectronique du Nord Departement ISEN Avenue Poincare B.P.69 59652 VILLENEUVE D'ASCQ CEDEX tel: (+33) 3 20 19 79 16 fax: (+33) 3 20 19 78 84 e-mail:dubois@isen.fr http://www.isen.fr/isen-lci/quest _____________________________________________________