Hi,friends
   i am working on the electro-thermal silicon micro devices. when the
device doping with phousrous was appled with current to measure at what
temperature the silicon begin to melt. we  found the melting point much
lower than undoped silicon(pure silicon 1415 c ). does someone know the
literature or experiences about that?

Thanks in advances


Jun Li
Visiting Researcher
MEAM. Univ of Pennsylvania