Hello
We are doing the silicon etching through windows simultaneously from both,
front and back sides using KOH solution. The masking material for silicon
etching is thermally grown 1 micron thick silicon dioxide. We observed that
front side oxide remains for very long time in KOH soluton. However, back side
oxide does not stay for long time. It etch out very fast than front side
oxide.
The wafer backside roughness is much higher than frontside surface. How can we
improve the backside oxide quality to be used as masking material for KOH
etching
Do anyone has any solution?
Thanks
Dr. Soumen Das
Sr. Scientific Officer
Microelectronics Centre
Dept. of Electronics & ECE
Indian Institute of Technology
Kharagpur 721 302, India
email: sou@ece.iitkgp.ernet.in
Phone: +91-3222-81914 (O)
            +91-3222-81475 (Lab)
            +91-3222-81915 (R)
Fax: +91-3222-755303/777190