Dear MEMS-Talk member:

I'm a graduate student and I have some research problem to consult with
you.

Now I want to make thick SiO2 film on n-type (100) silicon under normal
temperature by anodic oxidation method. The thickness is about 0.15um. Do
you think it's feasible?  If it's feasible, can you tell me under which
conditions such as concentration of HCl, voltage, illumination, time, I can
get such a thickness?

Thank you very much!
Fan Xinyu
January 7th,2002




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