Hi Nickolay,

if you have to make the nitride wafer silicon  anodic bonding with silicon
you must growth SiO2 on nitride wafer with high percentage of Na.


Greets,
Luciano Scaltrito
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Ing. Luciano Scaltrito
Dipartimento di Fisica
Politecnico di Torino
C.so Duca degli Abruzzi, 24
10129 Torino, Italy
tel +39 011 564.7305/564.4160
fax +39 011 564.7399
E-mail : scaltrito@polito.it
http://www.polito.it/centri/laborato/limadel/film/index.html
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