Hi,


I am trying to etch InGaAs/InP junction with HCL:CH3COOH:H2O2 (6:4:1) at temp 2
Deg. Centigrade. But i found that the surface is not uniform. and i'm unable to
standardize the etch rate of sample with the above solution. I need info
regarding this and related journals also.


Thanks in advance...


Krishna.






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