Dear colleagues, I am trying to isotropically etch glass wafers. I want to etch the mask directly, but after etch in 1:1 BOE/HF, I found that the Cr was lift off and etched away, and the lateral etch rate is much higher than vertical. I don't understand why is that, maybe because the etching of Cr, but accord- ing to CRC hand book, Cr should be able to stand for HF. Is there anyone did the similar process? How can I get good isotropic etching of glass wafer? Any suggestions and explanations are highly appreciated. Thanks a lot. Ingrid Y. Xu Microfabrication and Application Lab The University of Illinois at Chicago TEL: (312)-413-7576