Hello everybody ! does anyone know the etch rate of amorphous silicon (deposited by CVD) in Nitrogen plasma (using a PECVD-equipment; no self bias, 700 W @ 2,45 GHz) at 7500C? Does the plasma generate a silicon nitride layer on the surface of the silicon and if so, how is the conversion rate ? Is there a thickness limit I can reach ? Joachim Kusterer GFD mbH Ulm, Germany