I am interested in bonding silicon wafers to quartz wafers.  It seems
that this would be similar to bond-and-etch-back-Silicon-on-Insulator
techniques.  Does anyone have information on what anneal tempoeratures
are commonly used in BESOI techniques?  It seems to me that temperatures
of the order of 1000 degrees C may cause the silicon wafer to fracture
on cooling.

Best Regards
Jarlath McEntee