[demime could not interpret encoding binary - treating as plain text]
Great Problem! Fine tool....I would approach the last question in one of two
ways, chemically react an interface phase (oxide or nitride) or sputter mono
layers of a metal.  The key, is to control the nucleation and growth process
such that the surface energy always favors sideways growth.  Select materials
keeping in mind the surface free energy, thermodynamic stability and
temperature.  Some of the latest RTA tools boast <1 C, control and uniformity.
Design the thermal process to first initiate a cluster and then drop the
temperature to force growth, you will have a range of several degrees to play
with.  Some of the more smooth side walls I have observed were made with a
focused ion beam machining tool (FIB).  Huge trenches are possible.
Rob
>----- Original Message -----
>From: "Jia, Nancy" 
>To: "'mems-talk@memsnet.org'"
>
>Sent: Tue, 7 May 2002 11:06:49
>
>Dear all,
>
>We have access to a STS DRIE etcher and would like
>to create mirror-like
>finish on the sidewalls with a depth of a few
>microns.   What would be the
>sidewall smoothness limit with the STS etcher in
>terms of nano meters based
>on your experiences?    What are the tricks/recipes
>to create such a smooth
>sidewall?  If the sidewall is not smooth enough
>after the DRIE etching, what
>is the best treatment one has to further improve
>the sidewall roughness?
>Could you share the treatment recipe or point me to
>some good references?
>Thanks a lot!
>
>Nancy Jia
>
>Nancy Jia
>Wilson Center for Research and Technology
>Xerox Corporation
>800 Phillips Rd 147-16C
>Webster, NY 14580
>Phone: 585-422-7374
>Fax: 585-422-0202
>njia@crt.xerox.com
>_______________________________________________
>mems-talk@memsnet.org mailing list: to unsubscribe
>or change your list
>options, visit
>Hosted by the MEMS Exchange, providers of MEMS
>processing services.
>Visit us at http://www.mems-exchange.org/
>http://mail.mems-exchange.org/mailman/listinfo/mems
>-talk