Hello,

I am conducting some experiments in Vapor Phase etching using anhydrous
HF/Methanol mixtures.My sacrificial layer is Silicon dioxide (LPCVD deposited
at 420C, 2um thick) and my structural layer is Silicon Nitride (low stress
0.5um thick).

The nitride comes under heavy attack during the sacrificial layer release with
vapor phase etching (anhydrous HF/Methanol mixtures). I am looking for ways to
protect the nitride layer in this HF/methanol environment.

It would be nice if someone could give me some direction on how to proceed with
this issue.

Sincerely
Anupama


Anupama V. Govindarajan

Graduate Student
The Pennsylvania State University
Department Of Electrical Engineering
201 EE East #13
University Park, PA 16802
Phone 814-863-3211
email: anupamag@psu.edu