Or you can try increasing the pressure. I think allot of people run into
this problem because the mean free path length is longer then the
relevant feature size. I've seen this problem come up when trying to
post process vias that were laser cut in thick polyimide films. That is
why atmospheric pressure ozone/plasma treatment systems work. Of course
this assumes that you did not have any inorganic material sputtered onto
the resist during O2-plasma treatment.

Write back and let us know if this works.

-Mike

>>> smalek@samcointl.com 06/05/02 09:06AM >>>
Hi Martin,

You can use a UV-Ozone Cleaning process to remove the remaining 100-500
nm
of polyimide. Please visit our Web site at
http://www.samcointl.com/prod/UVO.html for our line of UV-Ozone
Cleaners
and contact me if you have any questions or would like to receive
additional information. I look forward to helping you with your
application.

Shahram



Martin HEDSTROM wrote:

> Hi all,
>
> I have a problem with removal of polyimide residues under a nitride
> membrane. The polyimide is removed in a pure O2-plasma since I am
afraid
> that any CF4 addition might hurt the nitride membrane. Apparently
this
> O2-plasma is not sufficient since I get small residues left with
about
> 100-500 nm thickness.
>
> Does anybody know about any dry etchant which can remove the last of
the
> polyimide without damaging the nitride membrane?
>
> Thanks in advance
>
> /Martin
> _______________________________________________
> MEMS-talk@memsnet.org mailing list: to unsubscribe or change your
list
> options, visit
http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/
_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk

Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/