Hi,

I have had radiation damage to CMOS circuits after mems processing. The
radiation damage is primarily caused by RIE, RF Sputtering or Ion Beam
etching. There is a Company that sells wafers called CHARM wafers that are
used to find out which equipment causes the damage. What happens is the
electron density of the plasma gets into the gate oxide and can rupture the
oxide or cause a mirror charge which shifts threshold voltages. If you contact
me I can try to dig out the contact information and we can discuss this in
more detail.

Rick



Rick Morrison
Sr. Semiconductor Engineer
Radant Mems Inc.
255 Hudson Road
Stow Ma, 01775
Tel- 978-562-3866
Cell 508-801-4796
AMS Phone: 508-770-3521
EMAIL  rmorrison@radanttechnologies.com