The following papers may be of some help: Tabata et al., "Anisotropic Etching of Silicon in (CH3)4OH Solutions", Transducers '91, pg 811-814, 1991 Merlos, et al., "TMAH/IPA anisotroipic etching characterstics", Sensors & Actuators A, Vol. 37, pg 737-743, 1993 _________________________________________________________ Mark Sheplak Microsystems Technology Laboratories and Department of Electrical Engineering and Computer Science 60 Vassar Street Room 39-561 Massachusetts Institute of Technology Cambridge, MA 02139 USA Phone: (617)253-6761 Fax: (617)253-8806 Email: sheplak@mtl.mit.edu _________________________________________________________ ------- Forwarded Message Return-Path: mems@ISI.EDU Received: by darkstar.isi.edu (5.65c/5.61+local-25) id; Mon, 28 Apr 1997 10:31:04 -0700 Received: by darkstar.isi.edu (5.65c/5.61+local-25) id ; Mon, 28 Apr 1997 10:31:03 -0700 Message-Id: <199704281731.AA14545@darkstar.isi.edu> From: mehta@cs.sfu.ca Subject: TMAH properties Date: Thu, 24 Apr 1997 18:04:58 -0700 (PDT) To: MEMS@ISI.EDU X-Url: http://mems.isi.edu/mems.html Reply-To: mehta@cs.sfu.ca Hi everyone, Does anyone know about the effect of TMAH selectivity of Silicon to Silicon oxide with change in the TMAH concentration ? I have not been able to find any paper which documents this, although there a quite a few papers which talk about TMAH undercutting, improving surface quality, decreasing Al etch etc.. Any pointers will be greatly appreciated.... Thanks... Manish Mehta email: mehta@cs.sfu.ca ------- End of Forwarded Message