Hi Lihuan, everyone

If you have a Plasmalab system and need process advice, you can freely
contact Oxford Instruments Plasma Technology applications lab (even if the
machine is out of warantee or second-hand).  Contact
martin.walker@oxinst.co.uk or andy.goodyear@oxinst.co.uk with your process
questions.  This lifetime support is available for any of our machines and
is transferrable - you only need to have your own machine to qualify for the
advice.

Martin Walker B.Sc.(Tech.) M.Sc.
Tactical Marketing Engineer
Oxford Instruments Plasma Technology
North End, Yatton, Bristol, BS49 4AP UK
T.+44 (0)1934 837031  F.+44 (0)1934 837001
E. 
W. 


Dear experts,

We only have the following gases available in our Oxford plasma lab ICP
etching system, SiCl4, Cl2, CH4, H2, SF6, O2, Ar and N2.  I want to etch
both SiO2 and Si3N4 (seperately, selectivey not needed, layers were CVD
grown on III-V, say GaAs substrates) with a acceptable etch rate, say
>50nm/min (preferably >100nm/min).  I prefer to use resist as mask.  Can
anybody give me a receipe such that I have something to start
optimzation with?  Thanks a lot.

Best regards,

Lihuan


--
Lihuan Song
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