Dear all, I am working with nanoimprint lithography to create sub 100nm structures. For metal lift-off I use a double layer resist scheme PMMA on LOL. It works fine. We are now changing from LOL to LOR and I have some trouble with the reproducibility. I suspect that it has to do with different solubility in the LOR from time to time. I use diluted MF 319 as the developer. And the resist thickness is about 70nm. I prebake at 180C for 30min. Does anyone have any experience working with LOR? Have any one had similar problems? Best regards Patrick ------------------------------------------------------------------------ ------ Patrick Carlberg Ph.D.cand., M.Sc.Phys. Biophysics & -nanosensors Mail Address: Division of Solid State Physics Lund University P.O. Box 118 221 00 Lund Sweden Delivery Address: Sölvegatan 14 223 62 Lund Visiting Address: Professorsgatan 1 Phone: +46 46 2224495 Fax: +46 46 2223637 E-mail: patrick.carlberg@ftf.lth.se URLs: www.nano.ftf.lth.se, www.ftf.lth.se