We have found that an SF6+O2 plasma in a parallel-plate etcher will etch Al2O3
slowly.
Much of the etching is probably due to ion bombardment.
The etch rates will of course vary with the power and other plasma parameters,
as well as the deposition method of the Al2O3.
Example etch rates at 100 W are
0.41 nm/min for evaporated Al2O3 and 0.55 nm/min for ion-milled Al2O3.

        --Kirt Williams Agilent Technologies


> -----Original Message-----
> From: Benny Hong [mailto:benny_hong@yahoo.com]
> Sent: Friday, February 07, 2003 5:09 PM
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Plasma Etching of Al2O3
>
>
>
> What plasma do I use for dry etching of Al2O3?
>
> what is the etching rate?
>
> Thx.
>
> Benny Hong
>
>
>
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