Dear All,

I work with Cr/Au/Cr layer on PDMS.
I have found the problem about the delamination of
Photoresist after dipping in Cr etchant.
My processes are
- Spinning PDMS
- E-beam depositing Cr/Au/Cr (10/300/10 nm thick)
- Spinning Photoresist (AZP 4400) with adhesive promoter and curing at room
temp 1 day
   (I couldn't bake at 100 c coz there was cracking on PDMS layer)
- developing pattern 20 um-wide of Photoresist
- And then etching Cr/Au/Cr layer by first dipping in Cr etchant

Then the problem occured. Photoresist pattern peeled off in particular
smaller patterns went first. I have worked on Cr/Au/Cr etching before on Si
wafer.
I have never found the problem like this.

Could you please advice me or suggest me from your experiences?
I will be very appreciated your help.

Best regards,

Alongkorn Pimpin

-------------------
Alongkorn Pimpin

Turbulence and Heat Transfer laboratory,
Department of Mechanical Engineering,
School of Engineering,
The university of Tokyo.
tel: 03-5841-6419
fax: 03-5800-6999
email: pimpin@thtlab.t.u-tokyo.ac.jp