SiO2 can be sputter deposited at low temperature in an RF sputter system, so
perhaps an RF sputtering of Si target in reactive Nitrogen-plasma environment?
Maybe try sputtering Si3N4 target or from a target of Nitride film on other
substrate. The quality will be lower (less dense) than your 300C process
however.


 Gowtham Vangara  wrote:Hi Everyone,
I am trying to do a deposition of silicon nitride, at room temperature , which
is very vital for my research project. The temperature that would suit the
deposition is 300 degrees. I ve done the deposition at 300 successfully. I want
to know how I could deposit the film at room temperature, or at a max 70. One of
the Suggestions that i ve received is to increase the rf power. but before
advancing i would like to get some suggestions from people if they have done
this before.
thanks and regards,
Gowtham Vangara,
Graduate Research Assistant,
Department of Electrical Engineering,
High Density Electronic Center(HiDEC),
University Of Arkansas,
Fayetteville, AR 72701
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