Gowthan,
    Check JVST (journal of vacuum science and technology) or ECS (electo.
chem. soc. ) they would have papers on this subject. I think there was one
paper a few years ago from some guys at ?plasmaquest?. I think what you'll
find out is that your going to have to go with a high density plasma source
like ICP, ECR, neutral loop etc. These type of sources can deposit at room
temp for sure. traditional Cap coupled plasma sources might get you close
but I dought it, again JVST will probably confirm that. I don't think your
going to find any vendors that use HDP sources for PECVD nitride and
plasmaquest is looking to sell tools so if your serious look to academia or
reconfigure your tool if you can. AND if you do find a vendor that can
deposit HDPECVD I would love to know about it.

eric

>
>    1. Silicon Nitride Deposition(room temperature) (Gowtham Vangara)
> ----------------------------------------------------------------------
>
> Message: 1
> Date: Wed, 26 Mar 2003 15:43:20 -0600
> From: "Gowtham Vangara" 
> Subject: [mems-talk] Silicon Nitride Deposition(room temperature)
> To: 
> Message-ID: <000801c2f3e0$c1002030$57aeb882@ENGR3371103>
> Content-Type: text/plain; charset="iso-8859-1"
>
> Hi Everyone,
> I am trying to do a deposition of silicon nitride, at room temperature ,
which is very vital for my research project. The temperature that would suit
the deposition is 300 degrees. I ve done the deposition at 300 successfully.
I want to know how I could deposit the film at room temperature, or at a max
70. One of the Suggestions that i ve received is to increase the rf power.
but before advancing i would like to get some suggestions from people if
they have done this before.
> thanks and regards,
> Gowtham Vangara,
> Graduate Research Assistant,
> Department of Electrical Engineering,
> High Density Electronic Center(HiDEC),
> University Of Arkansas,